Infineon FF1800R12IE5PBPSA1 Dual IGBT Module, 1.8 kA 1200 V, 10-Pin PRIME3+
- RS-artikelnummer:
- 218-4329
- Tillv. art.nr:
- FF1800R12IE5PBPSA1
- Tillverkare / varumärke:
- Infineon
Antal (1 fack med 3 enheter)*
29 837,631 kr
(exkl. moms)
37 297,038 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 07 april 2026
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Enheter | Per enhet | Per Bricka* |
|---|---|---|
| 3 + | 9 945,877 kr | 29 837,63 kr |
*vägledande pris
- RS-artikelnummer:
- 218-4329
- Tillv. art.nr:
- FF1800R12IE5PBPSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 1.8 kA | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 20 mW | |
| Number of Transistors | 2 | |
| Package Type | PRIME3+ | |
| Configuration | Dual | |
| Channel Type | N | |
| Pin Count | 10 | |
| Transistor Configuration | Dual | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 1.8 kA | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 20 mW | ||
Number of Transistors 2 | ||
Package Type PRIME3+ | ||
Configuration Dual | ||
Channel Type N | ||
Pin Count 10 | ||
Transistor Configuration Dual | ||
The Infineon PrimePack dual IGBT module with TRENCHSTOP IGBT5 and .XT interconnection technology. It has collector emitter voltage of 1800 V. The N-Channel TRENCHSTOP and field stop IGBT Modules are suitable for hard switching and soft switching applications such as high power converters, UPS system, motor drives and solar applications.
Copper bonds for high current carrying capabilities
Sintering of chips for highest power cycling capabilities
Total losses reduced by up to 20%
Less cooling effort for same output power
Enables higher system overload conditions
Sintering of chips for highest power cycling capabilities
Total losses reduced by up to 20%
Less cooling effort for same output power
Enables higher system overload conditions
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