onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole

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950,32 kr

(exkl. moms)

1 187,90 kr

(inkl. moms)

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RS-artikelnummer:
202-5682
Tillv. art.nr:
NXH35C120L2C2SG
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

35 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20.0V

Number of Transistors

6

Configuration

3 Phase

Package Type

DIP26

Mounting Type

Through Hole

Channel Type

N

The ON Semiconductor transfer molded power module containing a converter-inverter-brake circuit consisting of six 35 Ampere and 1600 Volts rectifiers, six 35 Ampere and 1200 Volts IGBTs with inverse diodes, one 35 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.

Low thermal resistance
6mm clearance distance between pin to heatsink
Solderable pins
Thermistor
Pb free
Halogen free or BFR free
RoHS compliant

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