onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount

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22 260,00 kr

(exkl. moms)

27 824,80 kr

(inkl. moms)

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800 +27,825 kr22 260,00 kr

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RS-artikelnummer:
185-7972
Tillv. art.nr:
AFGB40T65SQDN
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

238 W

Package Type

D2PAK

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.67 x 9.65 x 4.58mm

Gate Capacitance

2495pF

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Energy Rating

22.3mJ

Uppfyller ej RoHS

COO (Country of Origin):
CN
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.

VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV

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