Vishay SI7489DP-T1-GE3 IGBT
- RS-artikelnummer:
- 180-7817
- Tillv. art.nr:
- SI7489DP-T1-GE3
- Tillverkare / varumärke:
- Vishay
Denna produkt har utgått
- RS-artikelnummer:
- 180-7817
- Tillv. art.nr:
- SI7489DP-T1-GE3
- Tillverkare / varumärke:
- Vishay
Datablad
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
Vishay MOSFET
The Vishay surface mount P-channel SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 41mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 28A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Half-bridge motor drives
• High voltage non-synchronous buck converters
• Load switches
• High voltage non-synchronous buck converters
• Load switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• BS EN 61340-5-1:2007
• IEC 61249-2-21