STMicroelectronics STGF14NC60KD IGBT, 11 A 600 V, 3-Pin TO-220FP, Through Hole

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605,45 kr

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756,80 kr

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Per Rør*
50 - 5012,109 kr605,45 kr
100 - 4509,07 kr453,50 kr
500 - 9507,992 kr399,60 kr
1000 - 49507,786 kr389,30 kr
5000 +7,594 kr379,70 kr

*vägledande pris

RS-artikelnummer:
168-7736
Tillv. art.nr:
STGF14NC60KD
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

11 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

28 W

Package Type

TO-220FP

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 16.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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