STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount
- RS-artikelnummer:
- 168-6463
- Tillv. art.nr:
- STGE200NB60S
- Tillverkare / varumärke:
- STMicroelectronics
Antal (1 rör med 10 enheter)*
2 690,02 kr
(exkl. moms)
3 362,52 kr
(inkl. moms)
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- Dessutom levereras 580 enhet(er) från den 22 december 2025
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 10 + | 269,002 kr | 2 690,02 kr |
*vägledande pris
- RS-artikelnummer:
- 168-6463
- Tillv. art.nr:
- STGE200NB60S
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 200 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | ISOTOP | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 4 | |
| Transistor Configuration | Single | |
| Dimensions | 38.2 x 25.5 x 9.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type ISOTOP | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 4 | ||
Transistor Configuration Single | ||
Dimensions 38.2 x 25.5 x 9.1mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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