IXYS MDI75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

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RS-artikelnummer:
168-4497
Tillv. art.nr:
MDI75-12A3
Tillverkare / varumärke:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y4 M5

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Single

Dimensions

94 x 34 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

IGBT Modules, IXYS



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The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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