Infineon IRG4BC10UDPBF IGBT, 8.5 A 600 V, 3-Pin TO-220AB, Through Hole

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RS-artikelnummer:
145-9297
Tillv. art.nr:
IRG4BC10UDPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

8.5 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

38 W

Package Type

TO-220AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

80kHz

Transistor Configuration

Single

Dimensions

10.54 x 4.69 x 15.24mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
MX

Single IGBT up to 20A, Infineon


Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs


IGBT Transistors, International Rectifier


International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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