Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ

Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): CN
Produktdetaljer

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifikationer
Attribute Value
Maximum Continuous Collector Current 150 (Pulse) A
Maximum Collector Emitter Voltage 400 V
Maximum Gate Emitter Voltage ±6V
Maximum Power Dissipation 1.6 W
Package Type TSOJ
Mounting Type Surface Mount
Channel Type N
Pin Count 8
Transistor Configuration Single
Length 3.1mm
Width 2.5mm
Height 1mm
Dimensions 3.1 x 2.5 x 1mm
Gate Capacitance 5100pF
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +150 °C
28 I lager för leverans inom 1 arbetsdagar
Inom 2 arbetsdag(ar) (UK lager)
Pris (ex. moms) Each (In a Pack of 4)
9,203 kr
(exkl. moms)
11,504 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
4 - 36
9,203 kr
36,812 kr
40 - 76
7,575 kr
30,30 kr
80 - 196
6,903 kr
27,612 kr
200 - 396
6,515 kr
26,06 kr
400 +
6,36 kr
25,44 kr
Förpackningsalternativ:
Related Products
Responding to the market requirement to accommodate ever ...
Description:
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as ...
The XPT™ range of discrete IGBTs from IXYS ...
Description:
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of ...
ROHM's IGBT products will contribute to energy saving ...
Description:
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. Low Collector - Emitter Saturation VoltageLow Switching LossShort Circuit Withstand Time 5usBuilt in Very Fast & Soft Recovery FRD (RFN ...
RGW00TK65D is a high speed switching IGBT, suitable ...
Description:
RGW00TK65D is a high speed switching IGBT, suitable for PFC, Solar Inverter, UPS, Welding, IH applications. Low Collector - Emitter Saturation VoltageHigh Speed SwitchingLow Switching Loss & Soft SwitchingBuilt in Very Fast & Soft Recovery FRDPb - free Lead Plating. ...