Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ

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Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): CN
Produktdetaljer

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifikationer
Attribute Value
Maximum Continuous Collector Current 150 (Pulse) A
Maximum Collector Emitter Voltage 400 V
Maximum Gate Emitter Voltage ±6V
Maximum Power Dissipation 1.6 W
Package Type TSOJ
Mounting Type Surface Mount
Channel Type N
Pin Count 8
Transistor Configuration Single
Length 3.1mm
Width 2.5mm
Height 1mm
Dimensions 3.1 x 2.5 x 1mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +150 °C
Gate Capacitance 5100pF
48 I lager för leverans inom 1 arbetsdagar
Inom 2 arbetsdag(ar) (UK lager)
Pris (ex. moms) Each (In a Pack of 4)
12,228 kr
(exkl. moms)
15,285 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
4 - 36
12,228 kr
48,912 kr
40 - 76
10,055 kr
40,22 kr
80 - 196
9,125 kr
36,50 kr
200 - 396
8,66 kr
34,64 kr
400 +
8,48 kr
33,92 kr
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