Infineon FP35R12W2T4BOMA1 3 Phase Bridge IGBT Module, 54 A 1200 V AG-EASY2B-1, Panel Mount

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693,39 kr

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866,74 kr

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RS-artikelnummer:
111-6098
Tillv. art.nr:
FP35R12W2T4BOMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

54 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

215 W

Configuration

3 Phase Bridge

Package Type

AG-EASY2B-1

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

3 Phase

Dimensions

56.7 x 48 x 12mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

RoHS-status: Inte relevant

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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