Infineon FF1600R12IP7BOSA1 Half Bridge IGBT, 1.6 kA 1200 V, Screw Mount
- RS-artikelnummer:
- 349-361
- Tillv. art.nr:
- FF1600R12IP7BOSA1
- Tillverkare / varumärke:
- Infineon
Antal (1 enhet)*
9 810,56 kr
(exkl. moms)
12 263,20 kr
(inkl. moms)
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- Dessutom levereras 3 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 1 + | 9 810,56 kr |
*vägledande pris
- RS-artikelnummer:
- 349-361
- Tillv. art.nr:
- FF1600R12IP7BOSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 1.6 kA | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 20 mW | |
| Number of Transistors | 2 | |
| Configuration | Half Bridge | |
| Mounting Type | Screw Mount | |
| Channel Type | N | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 1.6 kA | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 20 mW | ||
Number of Transistors 2 | ||
Configuration Half Bridge | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
- COO (Country of Origin):
- DE
The Infineon PrimePACK 2 1200 V 1600 A Dual IGBT Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode is designed for high power applications, offering exceptional performance in a compact and robust package. It delivers the highest power density, optimizing space while maintaining outstanding power handling capabilities. The module features best-in-class VCEsat, ensuring low saturation voltage for higher efficiency and reduced energy losses.
Increase in power density
Less cooling effort for same output power
Higher inverter output current
Avoidance of paralleling of IGBT modules
Standardized housing
Less cooling effort for same output power
Higher inverter output current
Avoidance of paralleling of IGBT modules
Standardized housing
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