Infineon IGQ120N120S7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 120 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,

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RS-artikelnummer:
284-976
Tillv. art.nr:
IGQ120N120S7XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

120 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1 kW

Number of Transistors

1

Package Type

PG-TO247-3-PLUS-N

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

The Infineon IGBT is a cutting edge power semiconductor designed for high performance applications. With its advanced trench technology, this IGBT delivers exceptional ruggedness and reliability. Capable of withstanding short circuits for up to 8 microseconds, it is engineered for demanding environments such as industrial power supplies and renewable energy systems. The device operates at a collector emitter voltage of up to 1200 V and supports continuous collector currents of 120 A. Enhanced thermal performance is achieved through low thermal resistance, making it a favourite among engineers seeking efficiency and performance in their designs.

Optimized for high thermal dissipation
Handles brief short circuits reliably
Wide dv/dt controllability for flexibility
Conforms to industrial standards for robustness
Delivers low saturation voltage for efficiency
Offers a spectrum of models for applications

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