Fuji Electric 2MBi300VE-120-50, M277 Series IGBT Module, 360 A max, 1200 V, Panel Mount

  • RS-artikelnummer 747-1096
  • Tillv. art.nr 2MBi300VE-120-50
  • Tillverkare / varumärke Fuji Electric
Datablad
Lagstiftning och ursprungsland
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Produktdetaljer

IGBT Modules 2-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifikationer
Attribute Value
Configuration Series
Transistor Configuration Series
Maximum Continuous Collector Current 360 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type M277
Pin Count 7
Maximum Power Dissipation 2.2 kW
Dimensions 110 x 80 x 30mm
Height 30mm
Length 110mm
Maximum Operating Temperature +150 °C
Width 80mm
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Pris (ex. moms) Each
1 074,70 kr
(exkl. moms)
1 343,38 kr
(inkl. moms)
Enheter
Per unit
1 +
1 074,70 kr
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