Infineon IRS21814STRPBF, 1.8 A 20 V, SOIC
- RS-artikelnummer:
- 258-4008
- Tillv. art.nr:
- IRS21814STRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
49,84 kr
(exkl. moms)
62,30 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 24,92 kr | 49,84 kr |
| 20 - 48 | 20,89 kr | 41,78 kr |
| 50 - 98 | 19,655 kr | 39,31 kr |
| 100 - 198 | 18,20 kr | 36,40 kr |
| 200 + | 16,91 kr | 33,82 kr |
*vägledande pris
- RS-artikelnummer:
- 258-4008
- Tillv. art.nr:
- IRS21814STRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 1.8A | |
| Fall Time | 35ns | |
| Package Type | SOIC | |
| Number of Outputs | 2 | |
| Rise Time | 40ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | IRS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver Module | ||
Output Current 1.8A | ||
Fall Time 35ns | ||
Package Type SOIC | ||
Number of Outputs 2 | ||
Rise Time 40ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series IRS | ||
Automotive Standard No | ||
The Infineon high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high Pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Gate drive supply range from 10 V to 20 V
Under voltage lockout for both channels
3.3 V and 5 V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5 V offset
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4 A/1.8 A
RoHS compliant