Infineon IR2111STRPBF, Half Bridge, 420 mA 8-Pin 600 V, SOIC

Se alla Gate Drivers
Mängdrabatt möjlig

Antal (1 förpackning med 2 enheter)*

22,51 kr

(exkl. moms)

28,138 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 2 424 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per förpackning*
2 - 1811,255 kr22,51 kr
20 - 489,97 kr19,94 kr
50 - 989,24 kr18,48 kr
100 - 1988,625 kr17,25 kr
200 +8,065 kr16,13 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
258-3931
Tillv. art.nr:
IR2111STRPBF
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

Gate Driver Module

Output Current

420mA

Pin Count

8

Package Type

SOIC

Fall Time

40ns

Driver Type

Half Bridge

Rise Time

130ns

Minimum Supply Voltage

10V

Maximum Supply Voltage

600V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Series

IR2111(S) & (PbF)

Standards/Approvals

No

Automotive Standard

No

The Infineon half-bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Gate drive supply range from 10 to 20V

Under voltage lockout for both channels

CMOS Schmitt-triggered inputs with pull-down

Matched propagation delay for both channels

Internally set dead time

High side output in phase with input

relaterade länkar