Infineon, Gate Driver, 270 mA 8-Pin 25 V, SOIC
- RS-artikelnummer:
- 258-3924
- Tillv. art.nr:
- IR2103STRPBF
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 2500 enheter)*
18 792,50 kr
(exkl. moms)
23 490,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 14 maj 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 7,517 kr | 18 792,50 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3924
- Tillv. art.nr:
- IR2103STRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 270mA | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 50ns | |
| Driver Type | Gate Driver | |
| Rise Time | 100ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | IR21xx | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver Module | ||
Output Current 270mA | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 50ns | ||
Driver Type Gate Driver | ||
Rise Time 100ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series IR21xx | ||
Automotive Standard No | ||
The Infineon half-bridge driver is are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Under voltage lockout