Infineon 2ED2184S06FXUMA1, Gate Driver 2, 2.5 A 14-Pin 25 V, DSO
- RS-artikelnummer:
- 258-0613P
- Tillv. art.nr:
- 2ED2184S06FXUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal 20 enheter (levereras på en kontinuerlig remsa)*
309,10 kr
(exkl. moms)
386,38 kr
(inkl. moms)
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I lager
- Dessutom levereras 2 070 enhet(er) från den 22 december 2025
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Enheter | Per enhet |
|---|---|
| 20 - 48 | 15,455 kr |
| 50 - 98 | 14,28 kr |
| 100 - 198 | 13,385 kr |
| 200 + | 12,375 kr |
*vägledande pris
- RS-artikelnummer:
- 258-0613P
- Tillv. art.nr:
- 2ED2184S06FXUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 2.5A | |
| Pin Count | 14 | |
| Package Type | DSO | |
| Fall Time | 15ns | |
| Driver Type | Gate Driver | |
| Rise Time | 600ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 25V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | 2ED2184 (4) S06F (J) | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver | ||
Output Current 2.5A | ||
Pin Count 14 | ||
Package Type DSO | ||
Fall Time 15ns | ||
Driver Type Gate Driver | ||
Rise Time 600ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 25V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series 2ED2184 (4) S06F (J) | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650 V half-bridge high current, and high speed gate driver for MOSFET and IGBT, with typical 2.5 A sink and source current in DSO-8 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Negative VS transient immunity of 100 V
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Integrated shoot-through protection with built-in dead time (400 ns)
Maximum supply voltage of 25 V
50% lower level-shift losses