Infineon IRS2103SPBF, Gate Driver, 600 mA 8-Pin 625 V, SOIC
- RS-artikelnummer:
- 257-5809P
- Tillv. art.nr:
- IRS2103SPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal 50 enheter (levereras i ett rör)*
665,30 kr
(exkl. moms)
831,60 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 50 - 120 | 13,306 kr |
| 125 - 245 | 12,522 kr |
| 250 - 495 | 11,58 kr |
| 500 + | 10,82 kr |
*vägledande pris
- RS-artikelnummer:
- 257-5809P
- Tillv. art.nr:
- IRS2103SPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 600mA | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 35ns | |
| Driver Type | Gate Driver | |
| Rise Time | 70ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 625V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | IRS2103 | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver | ||
Output Current 600mA | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 35ns | ||
Driver Type Gate Driver | ||
Rise Time 70ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 625V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series IRS2103 | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon half bridge driver is a high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Floating gate driver designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 V to 20 V
Under voltage lockout
33 V, 5 V, and 15 V logic input compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Internal set dead time
High-side output in phase with HIN input
Low-side output out of phase with LIN input
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