ROHM BD2320EFJ-LAE2 MOSFET Gate Driver, 4.5 A 32 V, HTSOP-J8

Mängdrabatt möjlig

Antal (1 förpackning med 2 enheter)*

44,46 kr

(exkl. moms)

55,58 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 82 enhet(er) från den 22 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per förpackning*
2 - 4822,23 kr44,46 kr
50 - 9818,87 kr37,74 kr
100 - 24814,505 kr29,01 kr
250 - 99814,225 kr28,45 kr
1000 +10,81 kr21,62 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
255-7660
Tillv. art.nr:
BD2320EFJ-LAE2
Tillverkare / varumärke:
ROHM
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

ROHM

Product Type

MOSFET

Output Current

4.5A

Package Type

HTSOP-J8

Fall Time

6ns

Driver Type

MOSFET

Minimum Supply Voltage

32V

Maximum Supply Voltage

32V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Series

BD2320E

Mount Type

PCB

Automotive Standard

No

The ROHM High frequency high-side and low-side driver is 100 V maximum voltage high-side and low-side gate drivers which can drive external Nch-FET using the bootstrap method. The driver includes a 100 V bootstrap diode and independent inputs control for high-side and low-side. 3.3 V and 5.0 V are available for interface voltage. Under voltage lockout circuits are built in for high-side and low-side.

Long time support product for industrial applications

Under Voltage Lockout (UVLO) for high-side and low-side driver

3.3 V and 5.0 V interface voltage

Output In-phase with input signal

relaterade länkar