STMicroelectronics STGAP2SICSNCTR MOSFET Gate Driver, 4 A 8-Pin 3.1 V, SO-8

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145,82 kr

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182,275 kr

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Förpackningsalternativ:
RS-artikelnummer:
239-5536
Tillv. art.nr:
STGAP2SICSNCTR
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Output Current

4A

Pin Count

8

Fall Time

30ns

Package Type

SO-8

Driver Type

MOSFET

Minimum Supply Voltage

3.1V

Maximum Supply Voltage

3.1V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Series

STGAP

Automotive Standard

No

The STMicroelectronics STGAP2SICSN is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications. The device is available in two different configurations. The configuration with separated output pins allows to independently optimize turn-on and turn-off by using dedicated gate resistors. The configuration featuring single output pin and Miller CLAMP function prevents gate spikes during fast commutations in half-bridge topologies. Both configurations provide high flexibility and bill of material reduction for external components.

Overall input-output propagation delay: 75 ns

Separate sink and source option for easy gate driving configuration

4 A Miller CLAMP dedicated pin option

UVLO function

Temperature shutdown protection

Standby function

4.8 kVPK isolation

Narrow body SO-8

The device integrates protection functions: UVLO with optimized value for SiC MOSFETs and thermal shutdown are included to easily design high reliability systems. Dual input pins allow choosing the control signal polarity and also implementing HW interlocking protection in order to avoid cross-conduction in case of controller malfunction. The input to output propagation delay results are contained within 75 ns, providing high PWM control accuracy. A standby mode is available in order to reduce idle power consumption.

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