Infineon MOSFET Gate Driver 6, 165 mA 28-Pin 17.5 V, DSO
- RS-artikelnummer:
- 226-6045P
- Tillv. art.nr:
- 6EDL04N02PRXUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal 25 enheter (levereras på en kontinuerlig remsa)*
655,20 kr
(exkl. moms)
819,00 kr
(inkl. moms)
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- Dessutom levereras 2 190 enhet(er) från den 22 december 2025
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Enheter | Per enhet |
|---|---|
| 25 - 45 | 26,208 kr |
| 50 - 120 | 24,394 kr |
| 125 - 245 | 22,848 kr |
| 250 + | 20,988 kr |
*vägledande pris
- RS-artikelnummer:
- 226-6045P
- Tillv. art.nr:
- 6EDL04N02PRXUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Output Current | 165mA | |
| Pin Count | 28 | |
| Fall Time | 45ns | |
| Package Type | DSO | |
| Number of Outputs | 6 | |
| Driver Type | MOSFET | |
| Rise Time | 60ns | |
| Minimum Supply Voltage | 17.5V | |
| Maximum Supply Voltage | 17.5V | |
| Number of Drivers | 6 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 105°C | |
| Width | 4.4 mm | |
| Standards/Approvals | No | |
| Length | 9.7mm | |
| Height | 1.2mm | |
| Series | 6EDL04N02PR | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Output Current 165mA | ||
Pin Count 28 | ||
Fall Time 45ns | ||
Package Type DSO | ||
Number of Outputs 6 | ||
Driver Type MOSFET | ||
Rise Time 60ns | ||
Minimum Supply Voltage 17.5V | ||
Maximum Supply Voltage 17.5V | ||
Number of Drivers 6 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 105°C | ||
Width 4.4 mm | ||
Standards/Approvals No | ||
Length 9.7mm | ||
Height 1.2mm | ||
Series 6EDL04N02PR | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 6ED family is a full bridge driver to control power device like MOS-transistors or IGBTs in 3-phase system with a maximum blocking voltage of +600 V.It based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic Thyristor structure are present in the device. Hence, no parasitic latch-up may occur at all temperature and voltage conditions. It has signal interlocking of every phase to prevent cross conduction.
Maximum blocking voltage +600 V
Output source/sink current +0.165 A/-0.375 A
Integrated ultra-fast, low RDS(ON) bootstrap diode
Insensitivity of the bridge output to negative