Infineon 2ED2304S06FXUMA1 MOSFET Gate Driver 2, 360 mA 8-Pin 600 V, DSO

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146,46 kr

(exkl. moms)

183,075 kr

(inkl. moms)

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Enheter
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Per förpackning*
15 - 609,764 kr146,46 kr
75 - 1359,276 kr139,14 kr
150 - 3608,885 kr133,28 kr
375 - 7358,485 kr127,28 kr
750 +7,909 kr118,64 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
226-6033
Tillv. art.nr:
2ED2304S06FXUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

Gate Driver

Output Current

360mA

Pin Count

8

Package Type

DSO

Fall Time

40ns

Number of Outputs

2

Driver Type

MOSFET

Rise Time

48ns

Minimum Supply Voltage

20V

Number of Drivers

2

Maximum Supply Voltage

600V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Length

5mm

Width

4 mm

Standards/Approvals

RoHS

Height

1.75mm

Series

2ED2304S06F

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2304S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

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