Infineon 2ED2183S06FXUMA1 MOSFET Gate Driver 2, 2.5 A 8-Pin 20 V, DSO
- RS-artikelnummer:
- 226-6031
- Tillv. art.nr:
- 2ED2183S06FXUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
92,06 kr
(exkl. moms)
115,075 kr
(inkl. moms)
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- Dessutom levereras 2 500 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 18,412 kr | 92,06 kr |
| 25 - 45 | 15,636 kr | 78,18 kr |
| 50 - 120 | 14,538 kr | 72,69 kr |
| 125 - 245 | 13,62 kr | 68,10 kr |
| 250 + | 12,522 kr | 62,61 kr |
*vägledande pris
- RS-artikelnummer:
- 226-6031
- Tillv. art.nr:
- 2ED2183S06FXUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Output Current | 2.5A | |
| Pin Count | 8 | |
| Package Type | DSO | |
| Fall Time | 30ns | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 15ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 4.9mm | |
| Height | 1.72mm | |
| Standards/Approvals | No | |
| Series | 2ED2183S06F | |
| Width | 3.9 mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Output Current 2.5A | ||
Pin Count 8 | ||
Package Type DSO | ||
Fall Time 30ns | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 15ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 4.9mm | ||
Height 1.72mm | ||
Standards/Approvals No | ||
Series 2ED2183S06F | ||
Width 3.9 mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 2ED2183S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
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