STMicroelectronics L6388ED013TR High Side Gate Driver 2, 650 mA 8-Pin 17 V, SO-8
- RS-artikelnummer:
- 152-016
- Tillv. art.nr:
- L6388ED013TR
- Tillverkare / varumärke:
- STMicroelectronics
Antal (1 rulle med 2500 enheter)*
34 132,50 kr
(exkl. moms)
42 665,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 13,653 kr | 34 132,50 kr |
*vägledande pris
- RS-artikelnummer:
- 152-016
- Tillv. art.nr:
- L6388ED013TR
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Gate Driver Module | |
| Output Current | 650mA | |
| Pin Count | 8 | |
| Package Type | SO-8 | |
| Fall Time | 40ns | |
| Driver Type | High Side | |
| Number of Outputs | 2 | |
| Rise Time | 70ns | |
| Minimum Supply Voltage | 17V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 17V | |
| Minimum Operating Temperature | -45°C | |
| Maximum Operating Temperature | 150°C | |
| Series | L6388ED013TR | |
| Standards/Approvals | RoHS Compliant | |
| Mount Type | Surface | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Gate Driver Module | ||
Output Current 650mA | ||
Pin Count 8 | ||
Package Type SO-8 | ||
Fall Time 40ns | ||
Driver Type High Side | ||
Number of Outputs 2 | ||
Rise Time 70ns | ||
Minimum Supply Voltage 17V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 17V | ||
Minimum Operating Temperature -45°C | ||
Maximum Operating Temperature 150°C | ||
Series L6388ED013TR | ||
Standards/Approvals RoHS Compliant | ||
Mount Type Surface | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high voltage gate driver, manufactured with the BCD offline technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. Further prevention from outputs cross conduction is guaranteed by the dead time function.
Internal bootstrap diode
Outputs in phase with inputs
Dead time and interlocking function
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