Infineon 256 kB Serial-SPI Serial (SPI) F-RAM 8-Pin, FM25V02A-G
- RS-artikelnummer:
- 273-7388
- Tillv. art.nr:
- FM25V02A-G
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 97 enheter)*
5 305,90 kr
(exkl. moms)
6 632,86 kr
(inkl. moms)
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- Dessutom levereras 873 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 97 - 97 | 54,70 kr | 5 305,90 kr |
| 194 + | 48,737 kr | 4 727,49 kr |
*vägledande pris
- RS-artikelnummer:
- 273-7388
- Tillv. art.nr:
- FM25V02A-G
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256kB | |
| Product Type | Serial (SPI) F-RAM | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 40MHz | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Automotive Standard | No | |
| Minimum Operating Temperature | -40°C | |
| Number of Words | 32k | |
| Maximum Supply Voltage | 3.6V | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 2V | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256kB | ||
Product Type Serial (SPI) F-RAM | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 40MHz | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Automotive Standard No | ||
Minimum Operating Temperature -40°C | ||
Number of Words 32k | ||
Maximum Supply Voltage 3.6V | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 2V | ||
The Infineon FRAM is a 256 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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