Infineon 256 kB Serial-SPI Serial (SPI) F-RAM 8-Pin, FM25V02A-G
- RS-artikelnummer:
- 273-7388
- Tillv. art.nr:
- FM25V02A-G
- Tillverkare / varumärke:
- Infineon
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5 305,90 kr
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(inkl. moms)
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 97 - 97 | 54,70 kr | 5 305,90 kr |
| 194 + | 48,737 kr | 4 727,49 kr |
*vägledande pris
- RS-artikelnummer:
- 273-7388
- Tillv. art.nr:
- FM25V02A-G
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Serial (SPI) F-RAM | |
| Memory Size | 256kB | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 40MHz | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Minimum Supply Voltage | 2V | |
| Number of Words | 32k | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Serial (SPI) F-RAM | ||
Memory Size 256kB | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 40MHz | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Minimum Supply Voltage 2V | ||
Number of Words 32k | ||
Automotive Standard No | ||
The Infineon FRAM is a 256 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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