Infineon 4kbit I2C FRAM Memory 8-Pin SOIC, FM24CL04B-GTR
- RS-artikelnummer:
- 181-8319
- Tillv. art.nr:
- FM24CL04B-GTR
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
100,36 kr
(exkl. moms)
125,45 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 31 mars 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 20,072 kr | 100,36 kr |
| 50 - 120 | 18,48 kr | 92,40 kr |
| 125 - 245 | 18,01 kr | 90,05 kr |
| 250 - 495 | 17,876 kr | 89,38 kr |
| 500 + | 16,016 kr | 80,08 kr |
*vägledande pris
- RS-artikelnummer:
- 181-8319
- Tillv. art.nr:
- FM24CL04B-GTR
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
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Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4kbit | |
| Organisation | 512M x 8 bit | |
| Interface Type | I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 550ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.47mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 3.65 V | |
| Width | 3.98mm | |
| Height | 1.47mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 512M | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4kbit | ||
Organisation 512M x 8 bit | ||
Interface Type I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 550ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.47mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 3.65 V | ||
Width 3.98mm | ||
Height 1.47mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 512M | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 A active current at 100 kHz
3 A (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 C to +85 C
8-pin small outline integrated circuit (SOIC) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 A active current at 100 kHz
3 A (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 C to +85 C
8-pin small outline integrated circuit (SOIC) package
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