Infineon 512kbit SPI FRAM Memory 8-Pin SOIC, FM25V05-G

RS-artikelnummer:: 125-4227P
Tillv. art.nr:: FM25V05-G
Tillverkare / varumärke:: Infineon

Infineon 512kbit SPI FRAM Memory 8-Pin SOIC, FM25V05-G

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RS-artikelnummer:: 125-4227P
Tillv. art.nr:: FM25V05-G
Tillverkare / varumärke:: Infineon

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Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Memory Size	512kbit
	Organisation	64K x 8 bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	18ns
	Mounting Type	Surface Mount
	Package Type	SOIC
	Pin Count	8
	Dimensions	4.97 x 3.98 x 1.48mm
	Length	4.97mm
	Width	3.98mm
	Maximum Operating Supply Voltage	3.6 V
	Height	1.48mm
	Maximum Operating Temperature	+85 °C
	Number of Words	64K
	Automotive Standard	AEC-Q100
	Number of Bits per Word	8bit
	Minimum Operating Temperature	-40 °C
	Minimum Operating Supply Voltage	2 V

	Välj alla
	Brand Infineon
	Memory Size 512kbit
	Organisation 64K x 8 bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 18ns
	Mounting Type Surface Mount
	Package Type SOIC
	Pin Count 8
	Dimensions 4.97 x 3.98 x 1.48mm
	Length 4.97mm
	Width 3.98mm
	Maximum Operating Supply Voltage 3.6 V
	Height 1.48mm
	Maximum Operating Temperature +85 °C
	Number of Words 64K
	Automotive Standard AEC-Q100
	Number of Bits per Word 8bit
	Minimum Operating Temperature -40 °C
	Minimum Operating Supply Voltage 2 V

FM25V05-G Datasheet

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

512-Kbit ferroelectric random access memory (F-RAM) logically organized as 64K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 μA active current at 1 MHz
90 μA (typ) standby current
5 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.