Infineon 64kbit SPI FRAM Memory 8-Pin DFN, FM25CL64B-DG

RS-artikelnummer:: 125-4221P
Tillv. art.nr:: FM25CL64B-DG
Tillverkare / varumärke:: Infineon

Infineon 64kbit SPI FRAM Memory 8-Pin DFN, FM25CL64B-DG

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RS-artikelnummer:: 125-4221P
Tillv. art.nr:: FM25CL64B-DG
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Memory Size	64kbit
	Organisation	8K x 8 bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	20ns
	Mounting Type	Surface Mount
	Package Type	DFN
	Pin Count	8
	Dimensions	4 x 4.5 x 0.7mm
	Length	4.5mm
	Maximum Operating Supply Voltage	3.65 V
	Width	4mm
	Height	0.7mm
	Maximum Operating Temperature	+85 °C
	Minimum Operating Temperature	-40 °C
	Minimum Operating Supply Voltage	2.7 V
	Number of Bits per Word	8bit
	Number of Words	8K
	Automotive Standard	AEC-Q100

	Välj alla
	Brand Infineon
	Memory Size 64kbit
	Organisation 8K x 8 bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 20ns
	Mounting Type Surface Mount
	Package Type DFN
	Pin Count 8
	Dimensions 4 x 4.5 x 0.7mm
	Length 4.5mm
	Maximum Operating Supply Voltage 3.65 V
	Width 4mm
	Height 0.7mm
	Maximum Operating Temperature +85 °C
	Minimum Operating Temperature -40 °C
	Minimum Operating Supply Voltage 2.7 V
	Number of Bits per Word 8bit
	Number of Words 8K
	Automotive Standard AEC-Q100

FM25CL64B Datasheet

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.