Infineon 64kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24C64B-G

RS-artikelnummer:: 125-4209P
Tillv. art.nr:: FM24C64B-G
Tillverkare / varumärke:: Infineon

Infineon 64kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24C64B-G

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RS-artikelnummer:: 125-4209P
Tillv. art.nr:: FM24C64B-G
Tillverkare / varumärke:: Infineon

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Välj alla	Attribut	Värde
	Brand	Infineon
	Memory Size	64kbit
	Organisation	8K x 8 bit
	Interface Type	Serial-2 Wire, Serial-I2C
	Data Bus Width	8bit
	Maximum Random Access Time	550ns
	Mounting Type	Surface Mount
	Package Type	SOIC
	Pin Count	8
	Dimensions	4.97 x 3.98 x 1.48mm
	Length	4.97mm
	Width	3.98mm
	Maximum Operating Supply Voltage	5.5 V
	Height	1.48mm
	Maximum Operating Temperature	+85 °C
	Automotive Standard	AEC-Q100
	Minimum Operating Supply Voltage	4.5 V
	Minimum Operating Temperature	-40 °C
	Number of Words	8K
	Number of Bits per Word	8bit

	Välj alla
	Brand Infineon
	Memory Size 64kbit
	Organisation 8K x 8 bit
	Interface Type Serial-2 Wire, Serial-I2C
	Data Bus Width 8bit
	Maximum Random Access Time 550ns
	Mounting Type Surface Mount
	Package Type SOIC
	Pin Count 8
	Dimensions 4.97 x 3.98 x 1.48mm
	Length 4.97mm
	Width 3.98mm
	Maximum Operating Supply Voltage 5.5 V
	Height 1.48mm
	Maximum Operating Temperature +85 °C
	Automotive Standard AEC-Q100
	Minimum Operating Supply Voltage 4.5 V
	Minimum Operating Temperature -40 °C
	Number of Words 8K
	Number of Bits per Word 8bit

FM24C64B-G Datasheet

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA (typ) active current at 100 kHz
4 μA (typ) standby current
Voltage operation: VDD = 4.5 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.