Infineon 2Mbit SPI FRAM Memory 8-Pin SOIC, FM25V20A-G

RS-artikelnummer:: 124-2990P
Tillv. art.nr:: FM25V20A-G
Tillverkare / varumärke:: Infineon

Infineon 2Mbit SPI FRAM Memory 8-Pin SOIC, FM25V20A-G

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RS-artikelnummer:: 124-2990P
Tillv. art.nr:: FM25V20A-G
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Memory Size	2Mbit
	Organisation	256K x 8 bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	16ns
	Mounting Type	Surface Mount
	Package Type	SOIC
	Pin Count	8
	Dimensions	5.33 x 5.33 x 1.78mm
	Length	5.33mm
	Maximum Operating Supply Voltage	3.6 V
	Width	5.33mm
	Height	1.78mm
	Maximum Operating Temperature	+85 °C
	Number of Bits per Word	8bit
	Number of Words	256K
	Minimum Operating Temperature	-40 °C
	Minimum Operating Supply Voltage	2 V

	Välj alla
	Brand Infineon
	Memory Size 2Mbit
	Organisation 256K x 8 bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 16ns
	Mounting Type Surface Mount
	Package Type SOIC
	Pin Count 8
	Dimensions 5.33 x 5.33 x 1.78mm
	Length 5.33mm
	Maximum Operating Supply Voltage 3.6 V
	Width 5.33mm
	Height 1.78mm
	Maximum Operating Temperature +85 °C
	Number of Bits per Word 8bit
	Number of Words 256K
	Minimum Operating Temperature -40 °C
	Minimum Operating Supply Voltage 2 V

FM25V20A-G Datasheet

COO (Country of Origin):: TH

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast SPI
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 μA active current at 1 MHz
100 μA (typ) standby current
3 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.