Infineon NOR 64 MB CFI Flash Memory 48-Pin BGA, S29GL064S70BHI030

Antal (1 förpackning med 5 enheter)*

196,76 kr

(exkl. moms)

245,95 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 3 285 enhet(er) från den 02 februari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per förpackning*
5 +39,352 kr196,76 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
193-8826
Tillv. art.nr:
S29GL064S70BHI030
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Memory Size

64MB

Product Type

Flash Memory

Interface Type

CFI

Package Type

BGA

Pin Count

48

Organisation

8M x 8 Bit

Mount Type

Surface

Cell Type

NOR

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2.7V

Timing Type

Asynchronous

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Length

8.15mm

Standards/Approvals

No

Height

0.84mm

Width

6.15 mm

Maximum Random Access Time

70ns

Supply Current

50mA

Number of Bits per Word

8

Number of Words

8K

Automotive Standard

AEC-Q100

Series

S29GL064S

The S29GL-S mid density family of devices are 3.0-volt single-power flash memory manufactured using 65 nm MirrorBit technology.

The S29GL064S is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. Depending on the model number, the devices have 16bit wide data bus only, or a 16bit wide data bus that can also function as an 8bit wide data bus by using the BYTE# input.

The devices can be programmed either in the host system or in standard EPROM programmers. Access times as fast as 70 ns are available. Package offerings include 48pin TSOP, 56pin TSOP, 48-ball fine-pitch BGA, and 64-ball Fortified BGA, depending on model number. Each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Each device requires only a single 3.0-volt power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program (ACC) feature is supported through increased voltage on the WP#/ACC or ACC input. This feature is intended to facilitate system production. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.

The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

The Advanced Sector Protection features several levels of sector protection, which can disable both the program and erase operations in certain sectors.

Relaterade länkar