Winbond SLC NAND 8 GB Parallel Flash Memory 63-Pin VFBGA, W29N08GZBIBA
- RS-artikelnummer:
- 188-2657P
- Tillv. art.nr:
- W29N08GZBIBA
- Tillverkare / varumärke:
- Winbond
Antal 1 enhet (levereras på en bricka)*
189,95 kr
(exkl. moms)
237,44 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 56 enhet(er), redo att levereras
Enheter | Per enhet |
|---|---|
| 1 + | 189,95 kr |
*vägledande pris
- RS-artikelnummer:
- 188-2657P
- Tillv. art.nr:
- W29N08GZBIBA
- Tillverkare / varumärke:
- Winbond
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Winbond | |
| Product Type | Flash Memory | |
| Memory Size | 8GB | |
| Interface Type | Parallel | |
| Package Type | VFBGA | |
| Pin Count | 63 | |
| Organisation | 1024 x 8 bit | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 40MHz | |
| Cell Type | SLC NAND | |
| Maximum Supply Voltage | 1.95V | |
| Minimum Supply Voltage | 1.7V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | No | |
| Length | 11.1mm | |
| Height | 0.6mm | |
| Width | 11.1 mm | |
| Series | W29N08GZ | |
| Automotive Standard | No | |
| Number of Words | 1024K | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 25μs | |
| Välj alla | ||
|---|---|---|
Brand Winbond | ||
Product Type Flash Memory | ||
Memory Size 8GB | ||
Interface Type Parallel | ||
Package Type VFBGA | ||
Pin Count 63 | ||
Organisation 1024 x 8 bit | ||
Mount Type Surface | ||
Maximum Clock Frequency 40MHz | ||
Cell Type SLC NAND | ||
Maximum Supply Voltage 1.95V | ||
Minimum Supply Voltage 1.7V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals No | ||
Length 11.1mm | ||
Height 0.6mm | ||
Width 11.1 mm | ||
Series W29N08GZ | ||
Automotive Standard No | ||
Number of Words 1024K | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 25μs | ||
- COO (Country of Origin):
- TW
Density : 8Gbit (2 chip stacked solution)
Vcc : 1.7V to 1.95V
Bus width : x8/x16
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 8G-bit/1G-byte
Page size
2,112 bytes (2048 + 64 bytes)
1,056 words (1024 + 32 words)
Block size
64 pages (128K + 4K bytes)
64 pages (64K + 2K words)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 35ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for Block Lock feature
Lowest power consumption
Read: 13mA(typ.)
Program/Erase: 13mA(typ.)
CMOS standby: 20uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
8Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area