Microchip 1Mbit Parallel Flash Memory 32-Pin TSOP, SST39VF010-70-4I-WHE
- RS-artikelnummer:
- 177-9813
- Tillv. art.nr:
- SST39VF010-70-4I-WHE
- Tillverkare / varumärke:
- Microchip
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143,02 kr
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178,78 kr
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- Slutlig(a) 10 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 20 | 14,302 kr | 143,02 kr |
| 30 + | 13,854 kr | 138,54 kr |
*vägledande pris
- RS-artikelnummer:
- 177-9813
- Tillv. art.nr:
- SST39VF010-70-4I-WHE
- Tillverkare / varumärke:
- Microchip
Specifikationer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Memory Size | 1Mbit | |
| Interface Type | Parallel | |
| Package Type | TSOP | |
| Pin Count | 32 | |
| Organisation | 128K x 8 | |
| Mounting Type | Surface Mount | |
| Cell Type | Split Gate | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Block Organisation | Symmetrical | |
| Length | 8.1mm | |
| Height | 1.05mm | |
| Width | 12.5mm | |
| Dimensions | 12.5 x 8.1 x 1.05mm | |
| Maximum Operating Temperature | +85 °C | |
| Maximum Random Access Time | 70ns | |
| Series | SST39 | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 128K | |
| Number of Bits per Word | 8bit | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Memory Size 1Mbit | ||
Interface Type Parallel | ||
Package Type TSOP | ||
Pin Count 32 | ||
Organisation 128K x 8 | ||
Mounting Type Surface Mount | ||
Cell Type Split Gate | ||
Minimum Operating Supply Voltage 2.7 V | ||
Maximum Operating Supply Voltage 3.6 V | ||
Block Organisation Symmetrical | ||
Length 8.1mm | ||
Height 1.05mm | ||
Width 12.5mm | ||
Dimensions 12.5 x 8.1 x 1.05mm | ||
Maximum Operating Temperature +85 °C | ||
Maximum Random Access Time 70ns | ||
Series SST39 | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 128K | ||
Number of Bits per Word 8bit | ||
- COO (Country of Origin):
- US
The SST39VF010 is a 128K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF010 device writes (Program or Erase) with a 2.7-3.6V power supply.
Single Voltage Read and Write Operations
Superior Reliability
Low Power Consumption
Sector-Erase Capability
Fast Read Access Time
Latched Address and Data
Fast Erase and Byte-Program
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bit– Data# Polling
CMOS I/O Compatibility
Superior Reliability
Low Power Consumption
Sector-Erase Capability
Fast Read Access Time
Latched Address and Data
Fast Erase and Byte-Program
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bit– Data# Polling
CMOS I/O Compatibility
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