Microchip 4Mbit SPI Flash Memory 8-Pin WDFN, SST25PF040C-40I/MF
- RS-artikelnummer:
- 111-5581
- Tillv. art.nr:
- SST25PF040C-40I/MF
- Tillverkare / varumärke:
- Microchip
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- RS-artikelnummer:
- 111-5581
- Tillv. art.nr:
- SST25PF040C-40I/MF
- Tillverkare / varumärke:
- Microchip
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Memory Size | 4Mbit | |
| Interface Type | SPI | |
| Package Type | WDFN | |
| Pin Count | 8 | |
| Organisation | 512K x 8 bit | |
| Mounting Type | Surface Mount | |
| Cell Type | Split Gate | |
| Minimum Operating Supply Voltage | 2.3 V | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Block Organisation | Symmetrical | |
| Length | 6mm | |
| Height | 0.72mm | |
| Width | 5mm | |
| Dimensions | 6 x 5 x 0.72mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +85 °C | |
| Automotive Standard | AEC-Q100 | |
| Series | SST25 | |
| Number of Words | 512K | |
| Number of Bits per Word | 8bit | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Memory Size 4Mbit | ||
Interface Type SPI | ||
Package Type WDFN | ||
Pin Count 8 | ||
Organisation 512K x 8 bit | ||
Mounting Type Surface Mount | ||
Cell Type Split Gate | ||
Minimum Operating Supply Voltage 2.3 V | ||
Maximum Operating Supply Voltage 3.6 V | ||
Block Organisation Symmetrical | ||
Length 6mm | ||
Height 0.72mm | ||
Width 5mm | ||
Dimensions 6 x 5 x 0.72mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +85 °C | ||
Automotive Standard AEC-Q100 | ||
Series SST25 | ||
Number of Words 512K | ||
Number of Bits per Word 8bit | ||
SST25PF040C Serial SPI SuperFlash® Memory
The SST25PF040C family of devices from Microchip are SuperFlash® Memory ICs featuring a four-wire SPI-compatible interface. These Flash Memory Chips operate with a single power supply of 2.3V to 3.6V.
Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 40 ms and 80 ms respectively, with full chip erase operation taking a typical 250 ms.
Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 40 ms and 80 ms respectively, with full chip erase operation taking a typical 250 ms.
Features
Single Voltage Read and Write Operations
Serial Interface Architecture - SPI Compatible Mode 0 and Mode 3
High Speed Clock Frequency – 40 MHz max
Dual Input/Output Support
Low Power Consumption – Active Read Current 5 mA, Standby Current 5 μA, Power-down Mode Standby Current 3 μA (typical values)
Serial Interface Architecture - SPI Compatible Mode 0 and Mode 3
High Speed Clock Frequency – 40 MHz max
Dual Input/Output Support
Low Power Consumption – Active Read Current 5 mA, Standby Current 5 μA, Power-down Mode Standby Current 3 μA (typical values)
Flash Memory, Microchip
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