onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

RS-artikelnummer:: 103-5055
Tillv. art.nr:: MJ11015G
Tillverkare / varumärke:: onsemi

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

Tillfälligt slut i lager – restorder för leverans 2024-08-13

Lagt till varukorgen

Pris (ex. moms) Var (i en bricka med 100)

62,521 kr

(exkl. moms)

78,151 kr

(inkl. moms)

Enheter	Per unit	Per Tray*
100 +	62,521 kr	6 252,10 kr

RS-artikelnummer:: 103-5055
Tillv. art.nr:: MJ11015G
Tillverkare / varumärke:: onsemi

Datablad

Lagstiftning och ursprungsland

COO (Country of Origin):: CZ

Produktdetaljer

PNP Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity

Versions Available:
688-1502 - pack of 2
103-5055 - tray of 100

Specifikationer

Attribute	Value
Transistor Type	PNP
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	120 V
Maximum Emitter Base Voltage	5 V
Package Type	TO-204
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	5 V
Maximum Collector Base Voltage	120 V
Maximum Collector Emitter Saturation Voltage	4 V
Length	39.37mm
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+200 °C
Dimensions	39.37 x 26.67 x 8.51mm
Width	26.67mm
Height	8.51mm

RS-artikelnummer:: 103-5055
Tillv. art.nr:: MJ11015G
Tillverkare / varumärke:: onsemi