Nexperia PBSS306NZ,135 NPN Transistor, 5.1 A, 100 V, 4-Pin SOT-223

  • RS-artikelnummer 485-638
  • Tillv. art.nr PBSS306NZ,135
  • Tillverkare / varumärke Nexperia
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): CN
Produktdetaljer

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifikationer
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 5.1 A
Maximum Collector Emitter Voltage 100 V
Package Type SOT-223 (SC-73)
Mounting Type Surface Mount
Maximum Power Dissipation 2 W
Minimum DC Current Gain 30
Transistor Configuration Single
Maximum Collector Base Voltage 100 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 110 MHz
Pin Count 4
Number of Elements per Chip 1
Width 3.7mm
Dimensions 1.7 x 6.7 x 3.7mm
Length 6.7mm
Maximum Operating Temperature +150 °C
Height 1.7mm
Maximum Collector Emitter Saturation Voltage 0.3 V
Minimum Operating Temperature -65 °C
Maximum Base Emitter Saturation Voltage 1.05 V
4000 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Pack of 20)
5,17 kr
(exkl. moms)
6,46 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
20 - 80
5,17 kr
103,40 kr
100 - 380
4,395 kr
87,90 kr
400 - 980
3,904 kr
78,08 kr
1000 +
3,811 kr
76,22 kr
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