Broadcom ATF-58143-BLKG HEMT 5 μA 5 V 4-Pin SOT-343

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RS-artikelnummer:
839-9951
Tillv. art.nr:
ATF-58143-BLKG
Tillverkare / varumärke:
Broadcom
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Brand

Broadcom

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

500 mW

Pin Count

4

Maximum Operating Temperature

+150 °C

Dimensions

2.25 x 1.35 x 1mm

COO (Country of Origin):
MY

N-channel HEMT, Avago Technologies


A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT devices being Enhancement mode types.


JFET Transistors


A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.