Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V, 4-Pin TSFP

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Förpackningsalternativ:
RS-artikelnummer:
170-2364
Tillv. art.nr:
BFP840FESDH6327XTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

2.25 V

Package Type

TSFP

Mounting Type

Surface Mount

Maximum Power Dissipation

75 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

2.9 V

Maximum Operating Frequency

85 GHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1.4 x 0.8 x 0.55mm

Maximum Operating Temperature

+150 °C

The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application.

Robust high performance low noise amplifier based on Infineon's reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise
26 dB maximum gain
23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
Accurate SPICE GP model available to enable effective design in process

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