JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Beskrivning Pris Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS-artikelnummer 112-4185
Tillv. art.nrPMBF4393,215
VarumärkeNXP
2,12 kr
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N 50 → 150mA 40 V -40 V 40V Single Single 100 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 103-8160
Tillv. art.nrPMBF4393,215
VarumärkeNXP
1,287 kr
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N 50 → 150mA 40 V -40 V 40V Single Single 100 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 112-5510
Tillv. art.nrPMBFJ177,215
VarumärkeNXP
1,20 kr
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P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 626-3229
Tillv. art.nrPMBF4391,215
VarumärkeNXP
2,027 kr
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N 50 → 150mA 40 V -40 V 40V Single Single 30 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 103-5701
Tillv. art.nrBFR31,215
VarumärkeNXP
1,758 kr
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N 1 → 5mA 25 V -25 V -25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 179-1061
Tillv. art.nrPMBFJ309,215
VarumärkeNXP
0,893 kr
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N 12 → 30mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 626-3308
Tillv. art.nrPMBFJ308,215
VarumärkeNXP
0,649 kr
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N 12 → 60mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 626-2282
Tillv. art.nrBF510,215
VarumärkeNXP
6,204 kr
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N 0.7 → 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 626-2355
Tillv. art.nrBF556A,215
VarumärkeNXP
4,963 kr
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N 3 → 7mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 166-0535
Tillv. art.nrBF510,215
VarumärkeNXP
2,898 kr
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N 0.7 → 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 103-8162
Tillv. art.nrPMBFJ177,215
VarumärkeNXP
1,068 kr
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P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 626-3314
Tillv. art.nrPMBFJ309,215
VarumärkeNXP
0,982 kr
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N 12 → 30mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 166-0537
Tillv. art.nrBF556A,215
VarumärkeNXP
2,675 kr
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N 3 → 7mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 166-0536
Tillv. art.nrBF513,215
VarumärkeNXP
1,586 kr
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N 10 → 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 484-2498
Tillv. art.nrBFR31,215
VarumärkeNXP
4,136 kr
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N 1 → 5mA 25 V -25 V -25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 166-0548
Tillv. art.nrPMBFJ308,215
VarumärkeNXP
0,599 kr
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N 12 → 60mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 103-7584
Tillv. art.nrBF545A,215
VarumärkeNXP
3,205 kr
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N 2.0 → 6.5mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 626-3241
Tillv. art.nrPMBFJ110,215
VarumärkeNXP
3,93 kr
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N Min. 10mA 25 V -25 V -25V Single Single 18 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 626-2311
Tillv. art.nrBF513,215
VarumärkeNXP
1,608 kr
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N 10 → 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 626-2327
Tillv. art.nrBF545A,215
VarumärkeNXP
7,445 kr
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N 2.0 → 6.5mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm