- RS-artikelnummer:
- 231-8073
- Tillv. art.nr:
- QH12TZ600Q
- Tillverkare / varumärke:
- Power Integrations
900 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Var (i ett rör med 50)
14,665 kr
(exkl. moms)
18,331 kr
(inkl. moms)
Enheter | Per unit | Per Tube* |
50 - 450 | 14,665 kr | 733,25 kr |
500 - 950 | 14,286 kr | 714,30 kr |
1000 + | 13,936 kr | 696,80 kr |
- RS-artikelnummer:
- 231-8073
- Tillv. art.nr:
- QH12TZ600Q
- Tillverkare / varumärke:
- Power Integrations
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.
Features and Benefits
Low QRR, low IRRM, low tRR
High dIF/dt capable (1000 A / μs)
Soft recovery
AEC-Q101 qualified
Fab, assembly and test certified to IATF 16949
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
High dIF/dt capable (1000 A / μs)
Soft recovery
AEC-Q101 qualified
Fab, assembly and test certified to IATF 16949
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Applications
Power Factor Correction boost diode in on-board charger
Output rectifier of on-board charger
Output rectifier of on-board charger
Specifikationer
Attribute | Value |
---|---|
Maximum Forward Current | 12A |
Diode Configuration | Single |
Number of Elements per Chip | 1 |
Mounting Type | Through Hole |
Maximum Reverse Voltage | 600V |
Package Type | TO-220AC |
Diode Technology | SiC Schottky |
Pin Count | 2 |
- RS-artikelnummer:
- 231-8073
- Tillv. art.nr:
- QH12TZ600Q
- Tillverkare / varumärke:
- Power Integrations