- RS-artikelnummer:
- 273-5225
- Tillv. art.nr:
- BGA7L1BN6E6327XTSA1
- Tillverkare / varumärke:
- Infineon
Tillfälligt slut i lager – restorder för leverans 2024-07-29
Lagt till varukorgen
Pris (ex. moms) Var (i en rulle med 15000)
2,573 kr
(exkl. moms)
3,216 kr
(inkl. moms)
Enheter | Per unit | Per Reel* |
15000 + | 2,573 kr | 38 595,00 kr |
- RS-artikelnummer:
- 273-5225
- Tillv. art.nr:
- BGA7L1BN6E6327XTSA1
- Tillverkare / varumärke:
- Infineon
Datablad
Lagstiftning och ursprungsland
- COO (Country of Origin):
- MY
Produktdetaljer
The Infineon RF Amplifier is a front end low noise amplifier for LTE which covers a wide frequency range from 716 MHz to 960 MHz. The LNA provides 13.6 dB gain and 0. 75 dB noise figure at a current consumption of 4.9 mA. This RF amplifier is base on Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single line two state control and OFF state can be enabled by powering down Vcc.
Pb free package
RoHS compliant
Low noise figure
Digitally on off switch
Low current consumption
Only 1 external SMD component necessary
RoHS compliant
Low noise figure
Digitally on off switch
Low current consumption
Only 1 external SMD component necessary
Specifikationer
Attribute | Value |
---|---|
Amplifier Type | Low Noise Amplifier |
Typical Power Gain | 13.6 dB |
Typical Noise Figure | 0.75dB |
Number of Channels per Chip | 1 |
Maximum Operating Frequency | 960 MHz |
Package Type | TSNP-6-2 |
Pin Count | 6 |
- RS-artikelnummer:
- 273-5225
- Tillv. art.nr:
- BGA7L1BN6E6327XTSA1
- Tillverkare / varumärke:
- Infineon