Dual N-Channel MOSFET, 6 A, 24 V, 4-Pin X1-WLB1818 Diodes Inc DMN2023UCB4-7
- RS-artikelnummer:
- 921-1066
- Tillv. art.nr:
- DMN2023UCB4-7
- Tillverkare / varumärke:
- DiodesZetex
Tillfälligt slut i lager – restorder för leverans 2025-05-19
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 20)
5,80 kr
(exkl. moms)
7,25 kr
(inkl. moms)
| Enheter | Per unit | Per Pack* |
| 20 - 80 | 5,80 kr | 116,00 kr |
| 100 - 480 | 3,771 kr | 75,42 kr |
| 500 - 980 | 3,582 kr | 71,64 kr |
| 1000 - 2480 | 2,972 kr | 59,44 kr |
| 2500 + | 2,828 kr | 56,56 kr |
- RS-artikelnummer:
- 921-1066
- Tillv. art.nr:
- DMN2023UCB4-7
- Tillverkare / varumärke:
- DiodesZetex
Lagstiftning och ursprungsland
Produktdetaljer
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Voltage | 24 V |
| Package Type | X1-WLB1818 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 40 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.3V |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 1.45 W |
| Transistor Configuration | Common Drain |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Width | 1.8mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 1.8mm |
| Typical Gate Charge @ Vgs | 29 nC @ 4.5 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Height | 0.24mm |
| Forward Diode Voltage | 1V |
- RS-artikelnummer:
- 921-1066
- Tillv. art.nr:
- DMN2023UCB4-7
- Tillverkare / varumärke:
- DiodesZetex