SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0080120D

RS-artikelnummer:: 919-9749
Tillv. art.nr:: C2M0080120D
Tillverkare / varumärke:: Wolfspeed

SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0080120D

540 I lager för avsändande samma dag

Lagt till varukorgen

Pris (ex. moms) Var (i ett rör med 30)

268,33 kr

(exkl. moms)

335,41 kr

(inkl. moms)

Enheter	Per unit	Per Tube*
30 +	268,33 kr	8 049,90 kr

RS-artikelnummer:: 919-9749
Tillv. art.nr:: C2M0080120D
Tillverkare / varumärke:: Wolfspeed

Datablad

Lagstiftning och ursprungsland

COO (Country of Origin):: CN

Produktdetaljer

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Specifikationer

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	208 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.2V
Minimum Gate Threshold Voltage	1.7V
Maximum Power Dissipation	208 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +25 V
Typical Gate Charge @ Vgs	49.2 nC @ 20 V
Transistor Material	SiC
Width	5.21mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	16.13mm
Height	21.1mm
Minimum Operating Temperature	-55 °C

RS-artikelnummer:: 919-9749
Tillv. art.nr:: C2M0080120D
Tillverkare / varumärke:: Wolfspeed