- RS-artikelnummer:
- 900-9885
- Tillv. art.nr:
- CSD19535KTTT
- Tillverkare / varumärke:
- Texas Instruments
Denna produkt har utgått
- RS-artikelnummer:
- 900-9885
- Tillv. art.nr:
- CSD19535KTTT
- Tillverkare / varumärke:
- Texas Instruments
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Specifikationer
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 200 A |
Maximum Drain Source Voltage | 100 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 4.1 mΩ |
Channel Mode | Enhancement |
Maximum Power Dissipation | 300 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Typical Gate Charge @ Vgs | 75 nC @ 0 V |
Width | 9.65mm |
Transistor Material | Si |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Length | 10.67mm |
Series | NexFET |
Forward Diode Voltage | 1.1V |
Height | 4.83mm |
Minimum Operating Temperature | -55 °C |
- RS-artikelnummer:
- 900-9885
- Tillv. art.nr:
- CSD19535KTTT
- Tillverkare / varumärke:
- Texas Instruments