N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3

RS-artikelnummer:: 812-3132P
Tillv. art.nr:: SI2366DS-T1-GE3
Tillverkare / varumärke:: Vishay

N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3

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1,534 kr

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1,918 kr

(inkl. moms)

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20 +	1,534 kr

RS-artikelnummer:: 812-3132P
Tillv. art.nr:: SI2366DS-T1-GE3
Tillverkare / varumärke:: Vishay

Si2366DS, N-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

RS-artikelnummer:: 812-3132P
Tillv. art.nr:: SI2366DS-T1-GE3
Tillverkare / varumärke:: Vishay

Si2366DS, N-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.8 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	42 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	2.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.4mm
Typical Gate Charge @ Vgs	6.4 nC @ 10 V
Length	3.04mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.02mm

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.8 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	42 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	2.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.4mm
Typical Gate Charge @ Vgs	6.4 nC @ 10 V
Length	3.04mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.02mm

N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor