SiHG30N60E-GE3 N-Channel MOSFET, 29 A, 600 V E Series, 3-Pin TO-247AC Vishay

  • RS-artikelnummer 787-9421
  • Tillv. art.nr SiHG30N60E-GE3
  • Tillverkare / varumärke Vishay
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Produktdetaljer

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features

Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor

Specifikationer
Attribute Value
Channel Type N
Maximum Continuous Drain Current 29 A
Maximum Drain Source Voltage 600 V
Package Type TO-247AC
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 125 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 250 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Length 15.87mm
Transistor Material Si
Width 5.31mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 85 nC @ 10 V
Height 20.82mm
Series E Series
Maximum Operating Temperature +150 °C
25 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each
55,53 kr
(exkl. moms)
69,41 kr
(inkl. moms)
Enheter
Per unit
1 +
55,53 kr
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