N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247AC Vishay SiHG30N60E-GE3

RS-artikelnummer:: 787-9421
Tillv. art.nr:: SiHG30N60E-GE3
Tillverkare / varumärke:: Vishay

N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247AC Vishay SiHG30N60E-GE3

Tillfälligt slut i lager – restorder för leverans 2024-12-04

Lagt till varukorgen

Pris (ex. moms) Varje

68,54 kr

(exkl. moms)

85,68 kr

(inkl. moms)

Enheter	Per unit
1 - 9	68,54 kr
10 - 49	61,77 kr
50 - 99	58,22 kr
100 - 249	56,23 kr
250 +	50,68 kr

RS-artikelnummer:: 787-9421
Tillv. art.nr:: SiHG30N60E-GE3
Tillverkare / varumärke:: Vishay

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features

Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor

Specifikationer

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	600 V
Package Type	TO-247AC
Series	E Series
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	125 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	15.87mm
Transistor Material	Si
Typical Gate Charge @ Vgs	85 nC @ 10 V
Width	5.31mm
Height	20.82mm
Minimum Operating Temperature	-55 °C

RS-artikelnummer:: 787-9421
Tillv. art.nr:: SiHG30N60E-GE3
Tillverkare / varumärke:: Vishay