N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1
- RS-artikelnummer:
- 754-5434P
- Tillv. art.nr:
- IPB107N20N3GATMA1
- Tillverkare / varumärke:
- Infineon
855 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Varje (levereras i en rulle) Quantities below 150 on continuous strip
74,08 kr
(exkl. moms)
92,60 kr
(inkl. moms)
| Enheter | Per unit |
| 10 - 24 | 74,08 kr |
| 25 - 49 | 69,98 kr |
| 50 - 99 | 65,10 kr |
| 100 + | 60,11 kr |
- RS-artikelnummer:
- 754-5434P
- Tillv. art.nr:
- IPB107N20N3GATMA1
- Tillverkare / varumärke:
- Infineon
Lagstiftning och ursprungsland
Produktdetaljer
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 88 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | D2PAK (TO-263) |
| Series | OptiMOS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 11 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Width | 9.45mm |
| Length | 10.31mm |
| Transistor Material | Si |
| Height | 4.57mm |
| Minimum Operating Temperature | -55 °C |
- RS-artikelnummer:
- 754-5434P
- Tillv. art.nr:
- IPB107N20N3GATMA1
- Tillverkare / varumärke:
- Infineon