Silicon N-Channel MOSFET, 150 mA, 250 V, 3-Pin TO-92 Microchip TN5325K1-G
- RS-artikelnummer:
- 239-5617
- Tillv. art.nr:
- TN5325K1-G
- Tillverkare / varumärke:
- Microchip
Tillfälligt slut i lager – restorder för leverans 2024-07-16
Lagt till varukorgen
Pris (ex. moms) Var (i en bricka med 3000)
5,352 kr
(exkl. moms)
6,69 kr
(inkl. moms)
| Enheter | Per unit | Per Tray* |
| 3000 + | 5,352 kr | 16 056,00 kr |
- RS-artikelnummer:
- 239-5617
- Tillv. art.nr:
- TN5325K1-G
- Tillverkare / varumärke:
- Microchip
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Low threshold of maximum 2V
High input impedance and high gain
Rise Time of 15 ns
Turn-off Delay Time of 25 ns
Fall Time of 25 ns
High input impedance and high gain
Rise Time of 15 ns
Turn-off Delay Time of 25 ns
Fall Time of 25 ns
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 150 mA |
| Maximum Drain Source Voltage | 250 V |
| Series | TN5325 |
| Package Type | TO-92 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Number of Elements per Chip | 1 |
| Transistor Material | Silicon |
- RS-artikelnummer:
- 239-5617
- Tillv. art.nr:
- TN5325K1-G
- Tillverkare / varumärke:
- Microchip