- RS-artikelnummer:
- 230-9080
- Tillv. art.nr:
- NTB7D3N15MC
- Tillverkare / varumärke:
- onsemi
Tillfälligt slut i lager – restorder för leverans 2024-10-29
Lagt till varukorgen
Pris (ex. moms) Var (i en rulle med 800)
18,525 kr
(exkl. moms)
23,156 kr
(inkl. moms)
Enheter | Per unit | Per Reel* |
800 + | 18,525 kr | 14 820,00 kr |
- RS-artikelnummer:
- 230-9080
- Tillv. art.nr:
- NTB7D3N15MC
- Tillverkare / varumärke:
- onsemi
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V.
Optimized Switching performance
Max RDS(on) = 7.3 mΩ at VGS = 10 V, ID = 62A
Industrys Lowest Qrr and softest Body-Diode for superior low noise switching
50% Lower Qrr than other MOSFET Suppliers
High efficiency with lower switching spike and EMI
Lowers Switching Noise/EMI
Improved switching FOM particularly Qgd
100% UIL Tested
No need or less snubber
Max RDS(on) = 7.3 mΩ at VGS = 10 V, ID = 62A
Industrys Lowest Qrr and softest Body-Diode for superior low noise switching
50% Lower Qrr than other MOSFET Suppliers
High efficiency with lower switching spike and EMI
Lowers Switching Noise/EMI
Improved switching FOM particularly Qgd
100% UIL Tested
No need or less snubber
Specifikationer
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 101 A |
Maximum Drain Source Voltage | 150 V |
Package Type | D2PAK (TO-263) |
Series | NTB7D |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 0.073 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Transistor Material | Si |
Number of Elements per Chip | 1 |
- RS-artikelnummer:
- 230-9080
- Tillv. art.nr:
- NTB7D3N15MC
- Tillverkare / varumärke:
- onsemi