SiC N-Channel MOSFET, 46 A, 650 V, 4-Pin TO-247-4 onsemi NTH4L060N090SC1
- RS-artikelnummer:
- 229-6462
- Tillv. art.nr:
- NTH4L060N090SC1
- Tillverkare / varumärke:
- onsemi
Tillfälligt slut i lager – restorder för leverans 2024-09-03
Lagt till varukorgen
Pris (ex. moms) Var (i ett rör med 450)
110,248 kr
(exkl. moms)
137,81 kr
(inkl. moms)
| Enheter | Per unit | Per Tube* |
| 450 + | 110,248 kr | 49 611,60 kr |
- RS-artikelnummer:
- 229-6462
- Tillv. art.nr:
- NTH4L060N090SC1
- Tillverkare / varumärke:
- onsemi
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 46 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247-4 |
| Series | SiC Power |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.084 Ω |
| Maximum Gate Threshold Voltage | 4.3V |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |
- RS-artikelnummer:
- 229-6462
- Tillv. art.nr:
- NTH4L060N090SC1
- Tillverkare / varumärke:
- onsemi